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| Infrared Light Emitting Diodes LN78 GaAlAs Infrared Light Emitting Diode Unit : mm For optical control cystems o2.4 2.90.25 4.50.3 3.90.3 Features High-power output, high-efficiency : PO = 10 mW (typ.) High-speed modulation capability : fC = 12 MHz 12.8 min. 2.8 2.4 2-1.20.3 Not soldered 1.2 0.9 1.70.2 0.8 1.5 2-0.450.15 1 2.54 R1.2 2 0.450.15 Absolute Maximum Ratings (Ta = 25C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * R0.6 Symbol PD IF IFP * Ratings 180 100 1 3 -25 to+85 -30 to +100 Unit mW mA A V C C 1: Cathode 2: Anode VR Topr Tstg f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Cutoff frequency * Symbol PO P VF IR Ct fC* Conditions IF = 50mA IF = 50mA IF = 50mA IF = 100mA VR = 3V VR = 0V, f = 1MHz The angle in which radiant intencity is 50% min 6 typ 10 880 50 1.5 50 40 12 max Unit mW nm nm 1.8 10 V A pF deg. MHz IFP = 50mA + 10mAp-p Frequency when modulation optical power decreases by 3dB from 1MHz. ( PO(fCMHz) 10 log =-3 P O (1MHz) ) 1 Infrared Light Emitting Diodes LN78 IF -- Ta 120 10 2 IFP -- Duty cycle 10 4 IFP -- VF tw = 10s f = 100Hz Ta = 25C IF (mA) IFP (mA) Pulse forward current 1 10 10 2 IFP (A) 100 10 3 10 Allowable forward current 80 Pulse forward current 10 2 60 1 10 40 10 -1 20 1 0 - 25 0 20 40 60 80 100 10 -2 10 -1 10 -1 0 1 2 3 4 5 Ambient temperature Ta (C ) Duty cycle (%) Forward voltage VF (V) PO -- IFP 10 2 (1) tw = 10s f = 100Hz (2) DC Ta = 25C (1) 2.2 VF -- Ta 10 PO -- Ta IF = 50mA Relative radiant power PO VF (V) 10 1.8 1 Forward voltage (2) IF = 100mA 1.4 50mA Relative radiant power PO 120 1 10 -1 1.0 10 -2 1 10 10 2 10 3 0.6 - 40 0 40 80 10 -1 - 40 0 40 80 Pulse forward current IFP (mA) Ambient temperature Ta (C ) Ambient temperature Ta (C ) P -- Ta 920 IF = 50mA 100 Spectral characteristics IF = 50mA Ta = 25C Directivity characteristics 0 100 10 20 Peak emission wavelength P (nm) Relative radiant intensity (%) 900 80 80 70 Relative radiant intensity(%) 90 30 880 60 60 50 40 40 50 60 70 80 90 860 40 30 20 20 840 820 - 40 0 40 80 120 0 750 800 850 900 950 1000 1050 Ambient temperature Ta (C ) Wavelength (nm) 2 |
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